| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHW8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHW8ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| STW8NA60 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 124 K |
| STW8NA80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 45 K |
| STW8NB100 | N-CHANNEL 1000V - 1.2 OHM - 8A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STW8NB80 | N-CHANNEL 800V - 1.2 OHM - 7A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STW8NB90 | N-CHANNEL 900V - 1.3 OHM - 8A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STW8NC80Z | N-CHANNEL 800V 1.3 OHM 6.7A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 263 K |
| STW8NC90Z | N-CHANNEL 900V 1.1OHM 7.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 251 K |
| STW8NK80Z | N-CHANNEL 800V - 1.3 OHM - 6.2A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 472 K |
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