| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHW9N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
| PHW9N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
| PHW9N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 41 K |
| STW9NA60 | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 123 K |
| STW9NA80 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 132 K |
| STW9NB80 | N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STW9NB80 | N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STW9NC70Z | N-CHANNEL 700V 0.90 OHM 7.5A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 248 K |
| STW9NC80Z | N-CHANNEL 800 V - 0.82 OHM - 9.4 A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 248 K |
| STW9NK70Z | N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 664 K |
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