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WMBT5551LT1

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
WMBT5551LT1NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--36 K
1


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