| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA3X716 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3X717 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA3X717D | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA3X717E | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA4X713 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MA4X714 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA6X718 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
| MPX7100ASX | 100 KRA compensated silicon pressure sensor | Motorola | ISSUE B | 6 | -40°C | 125°C | 193 K |
| MPX7100GSX | 100 KRA compensated silicon pressure sensor | Motorola | ISSUE B | 6 | -40°C | 125°C | 193 K |
| MPX7100GVSX | 100 KRA compensated silicon pressure sensor | Motorola | ISSUE B | 6 | -40°C | 125°C | 193 K |
| [1] 2 [3] [4] [5] [6] [7] |
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