Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BGY148A | 6 V, HF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 84 K |
BGY148B | 6 V, HF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 84 K |
BGY148B | 6 V, HF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 84 K |
IRFY140 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
IRFY140C | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
MTY14N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 232 K |
MY1401A | Seven sigment numeric display | distributor | - | - | -25°C | 85°C | 69 K |
MY1401C | Seven sigment numeric display | distributor | - | - | -25°C | 85°C | 69 K |
OMY140 | 100V N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 39 K |
STY140NS10 | N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 254 K |
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