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| Example: max232 |
| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| BBY25-S1 | Silicon tuning varacator | Infineon-formely-Siemens | P | 2 | -55°C | 150°C | 15 K |
| BY251 | Silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 39 K |
| BY252 | Silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 39 K |
| BY253 | Silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 39 K |
| CFY25-17 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| CFY25-20 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| CFY25-23 | GaAs FET | Infineon-formely-Siemens | - | 4 | - | - | 158 K |
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| STY25NA60 | N-CHANNEL 600V - 0.225 OHM - 25A - MAX247 EXTREMELY LOW GATE CHARGE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
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