| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYG80A | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 50 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80C | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 150 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80D | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 200 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80F | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 300 V. Average forward current 2.3 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| YG802N09 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 75 K |
| YG805C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 74 K |
| YG805C04R | Schottky barrier diode | distributor | - | 3 | -40°C | 150°C | 45 K |
| YG805C06R | Schottky barrier diode | distributor | - | 3 | -40°C | 150°C | 46 K |
| YG808C10R | Schottky barrier diode | distributor | - | 3 | - | - | 66 K |
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