| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUZ101 | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 175°C | 185 K |
| BUZ101L | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 175°C | 185 K |
| BUZ101S | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 175°C | 69 K |
| BUZ101SL | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 175°C | 132 K |
| BUZ101SL-4 | SIPMOS power transistor | Infineon-formely-Siemens | - | 28 | -55°C | 175°C | 90 K |
| NEZ1011-2E | On-chip power amplifier 50 ohm matching circuit of X-band(10.7GHz to 11.7GHz) | NEC-Electronics-Inc- | - | - | - | - | 81 K |
| NEZ1011-3E | MES FET | NEC-Electronics-Inc- | - | - | - | - | 82 K |
| NEZ1011-4E | MES FET | NEC-Electronics-Inc- | - | - | - | - | 82 K |
| NEZ1011-5E | MES FET | NEC-Electronics-Inc- | - | - | - | - | 82 K |
| NEZ1011-8E | MES FET | NEC-Electronics-Inc- | - | - | - | - | 82 K |
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