Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUZ900 | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 39 K |
BUZ900D | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 40 K |
BUZ900DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | - | 3 | 0°C | 150°C | 39 K |
BUZ900P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | TO247 | 3 | 0°C | 150°C | 38 K |
BUZ900P | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 38 K |
BUZ900X4S | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | SOT227 | 4 | 0°C | 150°C | 33 K |
UZZ9000 | 6 V, Sensor conditioning electronic | Philips-Semiconductors | SO | 24 | -40°C | 150°C | 78 K |
UZZ9001 | 6 V, Sensor conditioning electronic | Philips-Semiconductors | SO | 24 | -40°C | 150°C | 81 K |
UZZ9001 | 6 V, Sensor conditioning electronic | Philips-Semiconductors | SO | 24 | -40°C | 150°C | 81 K |
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