| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISPLSI5512VA-110LB272 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LB272 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 272 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LB388 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | BGA | 388 | -55°C | 125°C | 331 K |
| ISPLSI5512VA-110LQ208 | 110 MHz in-system prommable 3.3V superWIDE high density PLD | Lattice-Semiconductor-Corporation | PQFP | 208 | -55°C | 125°C | 331 K |
| MA4E1339A-1141T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOD | 2 | -55°C | 125°C | 118 K |
| MA4E1339A-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E2054A-1146T | 3 V, surface mount low barrier X-band schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 147 K |
| MA4E2054A-1146T | 3 V, surface mount low barrier X-band schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 147 K |
| SCA-11 | 0.3-3 GHz, cascadable GaAs MMIC amplifier | distributor | Low thermal resistan | 4 | -45°C | 85°C | 273 K |
| SGA-1163 | DC-6000 MHz, 4.6V silicon germanium cascadeable gain block | distributor | - | 6 | -40°C | 85°C | 212 K |
| SPA-1118 | 850 MHz 1 watt power amplifier with active bias. | distributor | SOIC | 8 | -40°C | 85°C | 251 K |
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