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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY7C1360A-200AC256K x 36 pipelined SRAM, 200MHzCypress-SemiconductorTQFP1000°C70°C765 K
CY7C1360A-200AJC256K x 36 pipelined SRAM, 200MHzCypress-SemiconductorTQFP1000°C70°C765 K
CY7C1360A-200BGC256K x 36 pipelined SRAM, 200MHzCypress-SemiconductorFBGA1190°C70°C765 K
CY7C1362A-200AC512K x 18 pipelined SRAM, 200MHzCypress-SemiconductorTQFP1000°C70°C765 K
CY7C1362A-200AJC512K x 18 pipelined SRAM, 200MHzCypress-SemiconductorTQFP1000°C70°C765 K
CY7C1362A-200BGC512K x 18 pipelined SRAM, 200MHzCypress-SemiconductorFBGA1190°C70°C765 K
GTA-200DGastube arrester, 200Vdistributor-2-20°C65°C796 K
ispLSI1016EA-200LJ44In-system programmable high density PLD, 200 MHz, 4.5ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1032EA-200LT100In-system programmable high density programmable logic, 4nsLattice-Semiconductor-CorporationTQFP1000°C70°C172 K
ispLSI1032EA-200LT100In-system programmable high density programmable logic, 4nsLattice-Semiconductor-CorporationTQFP1000°C70°C172 K
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