| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LDA111 | Solid state current sensor | distributor | DIP | 6 | -40°C | 85°C | 69 K |
| LDA111S | Solid state current sensor | distributor | Surface mount | 6 | -40°C | 85°C | 69 K |
| LDA111STR | Solid state current sensor | distributor | Surface mount | 6 | -40°C | 85°C | 69 K |
| MA1113-1 | 20W high power amplifier for PCS | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -40°C | 70°C | 23 K |
| PA1110 | 1800-2000 MHz, ultra linear power amplifier | M-A-COM---manufacturer-of-RF | - | 3 | 0°C | 85°C | 38 K |
| TEA1112 | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | DIP | 16 | -25°C | 75°C | 125 K |
| TEA1112A | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | DIP | 16 | -25°C | 75°C | 125 K |
| TEA1112AT | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | SO | 16 | -25°C | 75°C | 125 K |
| TEA1112T | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | SO | 16 | -25°C | 75°C | 125 K |
| TEA1113T | 12 V, Low voltage versatile telephone transmission circuit with dialler interface | Philips-Semiconductors | SO | 16 | -25°C | 75°C | 128 K |
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