| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1171 | Small signal general purpose transistor | distributor | MPAK | - | - | - | 24 K |
| 2SA1177 | PNP epitaxial planar silicon transistor, HF amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 118 K |
| INA117AM | Precision High Common-Mode Voltage, Unity Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 192 K |
| INA117BM | Precision High Common-Mode Voltage, Unity Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 192 K |
| INA117KU | Precision High Common-Mode Voltage, Unity Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 192 K |
| INA117KU/2K5 | Precision High Common-Mode Voltage, Unity Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 192 K |
| INA117P | Precision High Common-Mode Voltage, Unity Gain Differential Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 192 K |
| KRA117M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 22 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
| KRA117S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 2.2 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
| TDA1175P | LOW-NOISE VERTICAL DEFLECTION SYSTEM | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
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