| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HA11G | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. | distributor | - | 2 | -65°C | 150°C | 162 K |
| SFA11G | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. | distributor | - | 2 | -65°C | 150°C | 167 K |
| ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN10A11GFTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 1 M |
| ZXMN6A11GFTA | 60 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
| ZXMN6A11GFTA | 60 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
| ZXMN6A11GFTC | 60 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
| ZXMN6A11GFTC | 60 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 1 M |
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