Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA1252 | PNP epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 106 K |
2SA1253 | PNP epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 110 K |
2SA1256 | PNP epitaxial planar silicon transistor, high-frequency amp application | SANYO-Electric-Co--Ltd- | 1218B | 3 | - | - | 122 K |
2SA1257 | PNP epitaxial planar silicon transistor, high-voltage, AF power amp, 100W output predriver application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 103 K |
INA125P | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
INA125PA | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
INA125U | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
INA125U/2K5 | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
INA125UA | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
INA125UA/2K5 | Instrumentation Amplifier with Precision Voltage Reference | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 273 K |
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