| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1710 | PNP epitaxial planar silicon transistor, high-definition CTR display video output application | SANYO-Electric-Co--Ltd- | 2064 | 3 | - | - | 118 K |
| KTA1715 | PNP transistor for power amplifier and power switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 460 K |
| KTA1716 | PNP transistor for high-voltage switching telephone power supply use | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 128 K |
| UPA1715G-E1 | Pch enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 67 K |
| UPA1715G-E2 | Pch enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 67 K |
| UPA1716G-E1 | Pch enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 66 K |
| UPA1716G-E2 | Pch enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 66 K |
| UPA1717G-E1 | P-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 65 K |
| UPA1717G-E2 | P-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 65 K |
| XP131A1715SR | 20V N channel power MOSFET | Torex-Semiconductor-Ltd- | - | - | - | - | 60 K |
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