Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA1723 | PNP epitaxial planar silicon transistor, high-frequency amp, medium-power amp application | SANYO-Electric-Co--Ltd- | 2009A | 3 | - | - | 78 K |
2SA1724 | PNP epitaxial planar silicon transistor, high-definition CTR display video output application | SANYO-Electric-Co--Ltd- | 2038A | 3 | - | - | 75 K |
2SA1728 | PNP epitaxial planar silicon transistor, high-speed switching application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 85 K |
2SA1729 | PNP epitaxial planar silicon transistor, high-speed switching application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 90 K |
CXA1720Q | Read/Write Amplifier (with Built-in Filters)for FDDs | Sony-Semiconductor | - | - | - | - | 336 K |
CXA1726AM | Multiplier IC for Displays | Sony-Semiconductor | - | - | - | - | 192 K |
CXA1726AS | Multiplier IC for Displays | Sony-Semiconductor | - | - | - | - | 192 K |
UPA1720G-E1 | N-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 66 K |
UPA1721G-E1 | N-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 66 K |
UPA1721G-E2 | N-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 66 K |
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