| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LNA2601L | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 41 K |
| LNA2603F | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
| LNA2606L | GaAlAs on GaAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 21 K |
| MRFA2602 | Broadband RF power amplifier | Motorola | - | 5 | -20°C | 70°C | 144 K |
| OPA2604AP | Dual FET-Input, Low Distortion Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 214 K |
| OPA2604AU | Dual FET-Input, Low Distortion Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 214 K |
| OPA2604AU/2K5 | Dual FET-Input, Low Distortion Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 214 K |
| PNA2602 | Darlington Phototransistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 49 K |
| PNA2602M | Darlington Phototransistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 50 K |
| PNA2602M | Darlington Phototransistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 50 K |
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