Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD641-EB | 7.5V; 0.9-1.3mW; 250MHz demodulating logarithmic amplifier. For IF/RF signal processing, received signal strength indicator (RSSI), high speed signal compression | Analog-Devices | - | - | - | - | 269 K |
AD6426XB | Enhanced GSM processor | Analog-Devices | PBGA | 144 | -25°C | 85°C | 506 K |
AD6426XST | Enhanced GSM processor | Analog-Devices | LQFP | 144 | -25°C | 85°C | 506 K |
AD645AH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645BH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645CH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645CH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645JN | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | DIP | 8 | 0°C | 70°C | 445 K |
AD645KN | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | DIP | 8 | 0°C | 70°C | 445 K |
AD645SH/883B | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
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