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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GAL22V10B-25LJHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10B-25LPHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-25LPHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10B-25QJHigh Performance E2CMOS PLD, 25ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10C-7LPIHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationDIP24-40°C85°C386 K
GAL22V10D-25LJHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-25LPHigh Performance E2CMOS PLD, 25ns, low powerLattice-Semiconductor-CorporationDIP240°C75°C386 K
GAL22V10D-25QJHigh Performance E2CMOS PLD, 25ns, quarter powerLattice-Semiconductor-CorporationPLCC280°C75°C386 K
GAL22V10D-7LJIHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationPLCC28-40°C85°C386 K
GAL22V10D-7LPIHigh Performance E2CMOS PLD, 7ns, low powerLattice-Semiconductor-CorporationDIP24-40°C85°C386 K
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