| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASAT15 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
| BAT15-03W | Silicon schottky diode | Infineon-formely-Siemens | - | 2 | -55°C | 150°C | 65 K |
| BAT15-099 | Silicon schottky diode | Infineon-formely-Siemens | - | 4 | -55°C | 150°C | 143 K |
| BAT15-099R | Silicon schottky diode | Infineon-formely-Siemens | - | 4 | -55°C | 150°C | 47 K |
| BAT15-124ES | HiRel Silicon schottky diode | Infineon-formely-Siemens | T1 | 2 | -55°C | 150°C | 134 K |
| BAT15-124S | HiRel Silicon schottky diode | Infineon-formely-Siemens | T1 | 2 | -55°C | 150°C | 134 K |
| DAT15015 | 20-700MHz GaAs 1 section attenuator | distributor | - | 12 | -55°C | 125°C | 26 K |
| DAT15073 | 200-600MHz 1 section attenuator | distributor | - | 12 | 0°C | 65°C | 26 K |
| THAT1510 | Low noise, high performance microphone preamplifier IC | THAT-Corporation | DIP | 8 | 0°C | 70°C | 129 K |
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