| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1012(K) | Bipolar power switching Darlington transistor | distributor | - | - | - | - | 33 K |
| CEB1012 | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 498 K |
| CEB1012L | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 497 K |
| DB1012S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 1200V, maxVRMS = 840V, maxVDC = 1200V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 21 K |
| TSMB1012 | Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -55°C | 150°C | 46 K |
| VTB1012 | Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 27 K |
| VTB1012B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 27 K |
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