| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1120 | PNP epitaxial planar silicon transistor, high-current driver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 76 K |
| 2SB1121 | PNP epitaxial planar silicon transistor, high-current driver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 95 K |
| 2SB1122 | PNP epitaxial planar silicon transistor, low-frequency power amp application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 117 K |
| 2SB1123 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 114 K |
| 2SB1124 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 122 K |
| 2SB1125 | PNP epitaxial planar silicon transistor, driver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 98 K |
| 2SB1126 | PNP epitaxial planar silicon transistor, for various drivers | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 81 K |
| 2SB1127 | PNP epitaxial planar silicon transistor, 20V/5A switching application | SANYO-Electric-Co--Ltd- | 2009A | 3 | - | - | 89 K |
| BB112 | Silicon variable capacitance diode | Infineon-formely-Siemens | - | 3 | -55°C | 85°C | 41 K |
| QVB11223 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | distributor | - | - | - | - | 185 K |
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