| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSM100GB170DN2 | 1700V/145A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 130 K |
| BSM150GB170DN2 | 1700V/220A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 131 K |
| BSM150GB170DN2E3166 | 1700V/220A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 129 K |
| BSM50GB170DN2 | 1700V/72A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 112 K |
| BSM75GB170DN2 | 1700V/110A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 113 K |
| MA2B170 | Silicon epitaxial planer type switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| XBB170S | Dual pole optoMOS relay | distributor | Surface mount | 8 | -40°C | 85°C | 151 K |
| XCB170 | Single pole optoMOS relay | distributor | DIP | 6 | -40°C | 85°C | 269 K |
| XCB170S | Single pole optoMOS relay | distributor | Surface mount | 6 | -40°C | 85°C | 269 K |
| XCB170STR | Single pole optoMOS relay | distributor | Surface mount | 6 | -40°C | 85°C | 269 K |
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