Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CEB6060 | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 510 K |
CEB6060L | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 516 K |
CEB6060LR | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 534 K |
CEB6060R | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 527 K |
OPB606A | Reflective object sensor | distributor | - | 4 | -40°C | 85°C | 225 K |
OPB606B | Reflective object sensor | distributor | - | 4 | -40°C | 85°C | 225 K |
OPB606C | Reflective object sensor | distributor | - | 4 | -40°C | 85°C | 225 K |
VTB6061 | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 31 K |
VTB6061B | Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 31 K |
VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | distributor | - | 2 | -54°C | 50°C | 30 K |
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