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bS107

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BS107200V; 120mA N-channel enchancement mode transistor. Specially suited for telephone subsetsdistributor-3-55°C150°C61 K
BS107TMOS switchingMotorola-3-55°C150°C76 K
BS107200 V, N-channel enhancement mode vertical D-MOS transistorPhilips-Semiconductors-3--65 K
BS107N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 200 V. Drain current(DC) 150 mA.Philips-SemiconductorsSOT5430°C150°C77 K
BS107SIPMOS small-signal transistorInfineon-formely-Siemens-3-55°C150°C77 K
BS107ATMOS switchingMotorola-3-55°C150°C76 K
BS107A200 V, N-channel enhancement mode vertical D-MOS transistorPhilips-Semiconductors-3--49 K
BS107PN-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C20 K
BS107PN-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C20 K
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