Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 199 K |
IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
IRGBC20KD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 430 K |
IRGBC20KD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 430 K |
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