| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC212 | ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW | Fairchild-Semiconductor | - | - | - | - | 329 K |
| BC212 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 62 K |
| BC212 | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 107 K |
| BC212L | ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW | Fairchild-Semiconductor | - | - | - | - | 313 K |
| BC212L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 62 K |
| BC213 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
| BC213L | ft min 200 MHz hfe min 80 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 45 V Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 625 mW | Fairchild-Semiconductor | - | - | - | - | 36 K |
| BC213L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
| BC214 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 154 K |
| BC214L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 154 K |
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