| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC307 | PNP transistor for general purpose applications and low noise amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 144 K |
| BC309 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | 3 | - | - | 69 K |
| BC309 | PNP transistor for general purpose applications and low noise amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 144 K |
| IRGBC30F | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 246 K |
| IRGBC30FD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 414 K |
| IRGBC30K | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 239 K |
| IRGBC30M | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 237 K |
| IRGBC30MD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 416 K |
| IRGBC30MD2-S | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 425 K |
| IRGBC30UD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 413 K |
| [1] 2 [3] [4] [5] [6] [7] |
|---|
