| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFBC30 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRFBC30A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
| IRFBC30AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 147 K |
| IRFBC30L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 362 K |
| IRFIBC30G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRG4BC30 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRG4BC30FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | International-Rectifier | - | 3 | -55°C | 150°C | 412 K |
| IRG4BC30K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 161 K |
| IRG4BC30K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 161 K |
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