| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC307 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 225 K |
| IRG4BC30K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 137 K |
| IRG4BC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 196 K |
| IRG4BC30KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 225 K |
| IRG4BC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4BC30U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRG4BC30U-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 308 K |
| IRG4BC30UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 234 K |
| IRG4BC30W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 139 K |
| IRG4BC30W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 188 K |
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