| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC300 | 850mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 122 K |
| BC301 | 850mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 122 K |
| BC302 | 850mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 122 K |
| BC303 | 850mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 122 K |
| BC304 | 850mW NPN silicon AF medium power amplifier | distributor | - | 3 | -55°C | 175°C | 122 K |
| BC307 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | distributor | - | 3 | 0°C | 150°C | 48 K |
| BC308 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 225 K |
| BC308 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | distributor | - | 3 | 0°C | 150°C | 49 K |
| BC309 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 225 K |
| TBC30-12EGWA | 76.2 mm (3.0 inch) 5 x 7 multicolor dot matrix display. High efficiency red, green. | distributor | - | 28 | -40°C | 85°C | 122 K |
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