| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR10CM | 10A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 94 K |
| BCR10CS | 10A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 86 K |
| BCR12CS | 12A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 86 K |
| BCR191W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR192W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR196W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR198S | PNP silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 43 K |
| BCR198W | PNP silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR1AM-12 | 1A semiconductor for low power use, glass passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 106 K |
| BCR1AM-8 | 1A semiconductor for low power use, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 104 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
|---|
