| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD242 | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| BD242 | 55 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
| BD242A | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| BD242A | 70 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
| BD242A | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| BD242B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 98 K |
| BD242B | 90 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
| BD242B | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| BD242C | 115 V, PNP silicon power transistor | distributor | - | 3 | -65°C | 150°C | 476 K |
| BD242C | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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