| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1005 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
| BF1005S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 52 K |
| BF1009 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 33 K |
| BF1009S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 51 K |
| BF1012 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 33 K |
| BF1012S | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 43 K |
| BF1012W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 359 K |
| DBF10 | Diffused junction silicon diode, 1A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1210 | 4 | - | - | 38 K |
| PMBF107 | N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT23 | - | - | - | 70 K |
| PMBF107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 60 K |
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