| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF2000 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 19 K |
| BF2000W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 19 K |
| BF2030 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 16 K |
| BF2030W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 16 K |
| BF2040 | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 16 K |
| BF2040W | Silicon N-channel MOSFET tetrode | Infineon-formely-Siemens | - | 4 | - | - | 31 K |
| DBF20 | Diffused junction silicon diode, 2A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1202 | 4 | - | - | 56 K |
| DBF20T | Diffused junction silicon diode, 2A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1202 | 4 | - | - | 44 K |
| IRFBF20 | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
| IRGBF20F | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
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