| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 65 K |
| BS107 | N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 200 V. Drain current(DC) 150 mA. | Philips-Semiconductors | SOT54 | 3 | 0°C | 150°C | 77 K |
| BS107A | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 49 K |
| HDBS103G | 1.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| HDBS104G | 1.0A, 400V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
| HDBS105G | 1.0A, 600V ultra fast recovery rectifier | distributor | - | - | - | - | 121 K |
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