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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB3116400BT-50 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 138 K |
| HYB3116405BT-50 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB3117400BT-50 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 253 K |
| HYB3117405BT-50 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB3164165BT-50 | 4M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 304 K |
| HYB3165165BT-50 | 4M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 304 K |
| HYB5116400BT-50 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
| HYB5116405BT-500 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 323 K |
| HYB5117400BT-500 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 325 K |
| HYB5117405BT-500 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 323 K |
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