| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME8815AEBT500 | Output voltage: 5.00V; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
| AME8815BEBT500 | Output voltage: 5.00V; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
| MMBT5067LT1 | Low noise transistor | Motorola | - | 3 | -55°C | 150°C | 406 K |
| MMBT5088 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 211 K |
| MMBT5088LT1 | Low noise transistor | Motorola | - | 3 | -55°C | 150°C | 298 K |
| MMBT5089 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 211 K |
| MMBT5089LT1 | Low noise transistor | Motorola | - | 3 | -55°C | 150°C | 298 K |
| SBT50S | 50 V, 2.5 A, schottky barrier rectifier diode | distributor | D2 | 2 | -65°C | 150°C | 62 K |
| SMBT5086 | PNP silicon transistor for AF input stages and driver application | Infineon-formely-Siemens | - | 3 | - | - | 253 K |
| SMBT5087 | PNP silicon transistor for AF input stages and driver application | Infineon-formely-Siemens | - | 3 | - | - | 253 K |
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