| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HMBT5086 | 3V 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | distributor | - | 3 | - | - | 28 K |
| HMBT5087 | 3V 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | distributor | - | 3 | - | - | 28 K |
| HMBT5088 | 4.5 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | distributor | - | 3 | - | - | 29 K |
| HMBT5089 | Emitter to base voltage:4.5V; 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | distributor | - | 3 | - | - | 29 K |
| MMBT5087LT1 | 50 V, low noise transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| MMBT5088LT1 | 30 V, low noise transistor | distributor | - | 3 | -55°C | 150°C | 211 K |
| MMBT5089LT1 | 25 V, low noise transistor | distributor | - | 3 | -55°C | 150°C | 211 K |
| PMBT5088 | NPN general purpose transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 45 K |
| SBT50 | 50 V, 2.5 A, schottky barrier rectifier diode | distributor | D2A | 2 | -65°C | 150°C | 28 K |
| SBT50 | 50 V, 2.5 A, schottky barrier rectifier diode | distributor | D2A | 2 | -65°C | 150°C | 28 K |
| [1] [2] 3 [4] |
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