| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3600 | NPN epitaxial planar silicon transistor, ultrahigh-definition CTR display video output application | SANYO-Electric-Co--Ltd- | 2009A | 3 | - | - | 116 K |
| 2SC3601 | NPN epitaxial planar silicon transistor, ultrahigh-definition CTR display video output application | SANYO-Electric-Co--Ltd- | 2009B | 3 | - | - | 212 K |
| 2SC3603 | For amplify microwave and low noise. | NEC-Electronics-Inc- | - | - | - | - | 89 K |
| 2SC3607 | Silicon NPN transistor for VHF-UHF band low noise amplifier applications | Toshiba | - | 3 | -55°C | 125°C | 315 K |
| BZD27-C360 | Voltage regulator diodes | Philips-Semiconductors | SOD87 | - | - | - | 38 K |
| BZT03-C360 | Voltage regulator diodes | Philips-Semiconductors | SOD57 | - | - | - | 46 K |
| BZW03-C360 | Voltage regulator diodes | Philips-Semiconductors | SOD64 | - | - | - | 48 K |
| BZW03-C360 | Voltage regulator diodes | Philips-Semiconductors | SOD64 | - | - | - | 48 K |
| FSYC360D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 77 K |
| FSYC360R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 77 K |
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