| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC4105 | NPN triple diffused planar silicon transistor, swithing regulator application | SANYO-Electric-Co--Ltd- | 2010A | 3 | - | - | 93 K |
| KM44C4105CK-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CK-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CKL-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CKL-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CS-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CS-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CSL-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| KM44C4105CSL-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 378 K |
| LC4105V | Level shifter | SANYO-Electric-Co--Ltd- | SSOP30 | 30 | - | - | 66 K |
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