| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC636 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 62 K |
| BC636 | PNP silicon high current transistor | Motorola | - | 3 | -55°C | 150°C | 116 K |
| BC636 | High Current Transistor PNP | ON-Semiconductor | - | 3 | - | - | 86 K |
| BC636 | PNP silicon AF transistor | Infineon-formely-Siemens | - | 3 | - | - | 126 K |
| BC636-10 | PNP medium power transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| BC636-10 | PNP medium power transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| BC636-16 | PNP medium power transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 198 K |
| PIC636 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
| PIC636 | Power Integrated Circuit | Microsemi-Corporation | - | - | - | - | 215 K |
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