| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM1000 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM1000 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM1001 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM1001-7R | 50 Watt, input voltage range:28-140V, output voltage 5.1V (8A) DC/DC converter | distributor | SO | 32 | -40°C | 71°C | 146 K |
| CM100DY-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM100DY-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 48 K |
| CM100TF-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 56 K |
| CM100TF-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 53 K |
| CM100TF-28H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 53 K |
| CM100TU-24F | 100A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 80 K |
| [1] 2 [3] [4] [5] [6] [7] |
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