| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM200DY-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM200DY-24H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 49 K |
| CM200DY-28H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 50 K |
| CM200E3U-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 50 K |
| CM200HA-24H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 42 K |
| CM200TU-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -40°C | 150°C | 51 K |
| CM20MD-12H | 20A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 187 K |
| CM20MD1-12H | 20A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 153 K |
| CM20TF-12H | 20 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 50 K |
| CM20TF-24H | 20 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 53 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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