Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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5962D0053601TXA | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -55°C | 125°C | 128 K |
5962D0053601TXC | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -55°C | 125°C | 128 K |
5962D0053601TXC | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -55°C | 125°C | 128 K |
5962D0053602TXA | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -40°C | 125°C | 128 K |
5962D0053604TXA | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -40°C | 125°C | 128 K |
SRD00512Z | Ge-avalanche photodiode in TO-package with integrated optics | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 75 K |
SRD00514H | Ge-avalanche photodiode with pigtail | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 124 K |
SRD00515H | Ge-avalanche photodiode with pigtail | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 124 K |
SRD00534H | Ge-avalanche photodiode with pigtail | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 112 K |
SRD00535H | Ge-avalanche photodiode with pigtail | Infineon-formely-Siemens | - | 3 | -40°C | 85°C | 112 K |
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