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d196

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SD1964Silicon NPN epitaxial planar type power transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----55 K
CXD1961AQDVB-S Frontend IC(QPSK demodulation+FEC)Sony-Semiconductor----294 K
CXD1961QDVB-S Front-end IC (QPSK demodulator + FEC)Sony-Semiconductor----217 K
MD1962Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 300pA/15mV @ 1 x 10^6 gain & 1V/20nA.distributor-55°C40°C357 K
MD1963Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 300pA/15mV @ 1 x 10^6 gain & 1V/20nA.distributor-55°C40°C357 K
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