Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD227 | Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. | distributor | - | 3 | 0°C | 150°C | 74 K |
2SD2271 | Silicon NPN transistor for motor drive applications and high current switching applications | Toshiba | - | 3 | -55°C | 150°C | 204 K |
2SD2273 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
2SD2275 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 57 K |
2SD2276 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 57 K |
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