| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD2635 | NPN Epitaxial Planar Silicon Darlington Transistor NPN Epitaxial Planar Silicon Darlington Transistor | SANYO-Electric-Co--Ltd- | - | - | - | - | 35 K |
| FLLD263 | Silicon planar low leakage common anode diode pair | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 77 K |
| FLLD263 | Silicon planar low leakage common anode diode pair | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 77 K |
| K4D263238M-QC50 | 128Mbit DDR SDRAM, SSTL_2 interface, 200MHz | Samsung-Electronic | TQFP | 100 | 0°C | 65°C | 281 K |
| K4D263238M-QC55 | 128Mbit DDR SDRAM, SSTL_2 interface, 183MHz | Samsung-Electronic | TQFP | 100 | 0°C | 65°C | 281 K |
| K4D263238M-QC60 | 128Mbit DDR SDRAM, SSTL_2 interface, 166MHz | Samsung-Electronic | TQFP | 100 | 0°C | 65°C | 281 K |
| LD263 | GaAs infrared emitter array | Infineon-formely-Siemens | Lead frame array | 6 | -40°C | 80°C | 43 K |
| SD263C30S50L | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 354 K |
| SD263C36S50L | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 354 K |
| SD263C40S50L | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 354 K |
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