| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CJD2955 | PNP Complementary silicon power transistor | distributor | DPAK | 4 | -65°C | 150°C | 542 K |
| MJD2955 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 43 K |
| MJD2955 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 43 K |
| MJD2955 | Complementary power transistor | Motorola | - | 4 | -65°C | 150°C | 202 K |
| MJD2955 | Complementary Power Transistors | ON-Semiconductor | DPAK | 3 | - | - | 147 K |
| MJD2955 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 91 K |
| MTD2955E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 243 K |
| MTD2955V | P-Channel Enhancement Mode Field Effect Transistor [Life-time buy] | Fairchild-Semiconductor | - | - | - | - | 380 K |
| MTD2955V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 148 K |
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